Rhombohedral boron nitride epitaxy on ZrB2
Epitaxial rhombohedral boron nitride (r-BN) films were deposited on ZrB2(0001)/4H-SiC(0001) by chemical vapor deposition at 1485 degrees C from the reaction of triethylboron and ammonia and with a minute amount of silane (SiH4). X-ray diffraction (XRD) w-scans yield the epitaxial relationships of r-BN(0001) k ZrB2(0001) out-of-plane and r-BN[11-20] k ZrB2[11-20] in-plane. Cross-sectional transmission electron microscopy (TEM) micrographs showed that epitaxial growth of r-BN films prevails to similar to 10 nm. Both XRD and TEM demonstrate the formation of carbon- and nitrogen-containing cubic inclusions at the ZrB2 surface. Quantitative analysis from x-ray photoelectron spectroscopy of the r-BN films shows B/N ratios between 1.30 and 1.20 and an O content of 3-4 at. %. Plan-view scanning electron microscopy images reveal a surface morphology where an amorphous material comprising B, C, and N is surrounding the epitaxial twinned r-BN crystals. ; Funding Agencies|Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [IS14-0027]; Carl Tryggers Foundation for Scientific Research [CTS 14:189]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]