Suchergebnisse

Four different types of fuel blends containing demolition and construction wood and household waste were combusted in a small-scale experimental set-up to study the effect of fuel composition on the emissions of polychlorinated dibenzo-p-dioxins (PCDDs), dibenzofurans (PCDFs), biphenyls (PCBs), chlorobenzenes (PCBzs), chlorophenols (PCPhs) and polycyclic aromatic hydrocarbons (PAHs). Two woody materials, commercial stemwood (ST) and demolition and construction wood (DC) were selected because of the differences in their persistent organic pollutants (POPs), ash and metals content. For household waste, we used a municipal solid waste (MSW) and a refuse-derived fuel (RDF) from MSW with 5–20 wt% and up to 5 wt% food waste content respectively. No clear effect on the formation of pollutants was observed with different food waste content in the fuel blends tested. Combustion of ST-based fuels was very inefficient which led to high PAH emissions (32 ± 3.8 mg/kgfuel). The use of DC clearly increased the total PCDD and PCDF emissions (71 ± 26 μg/kgfuel) and had a clear effect on the formation of toxic congeners (210 ± 87 ng WHO2005-TEQ/kgfuel). The high PCDD and PCDF emissions from DC-based fuels can be attributed to the presence of material contaminants such as small pieces of metals or plastics as well as timber treated with chromated copper arsenate preservatives and pentachlorophenol in the DC source. ; The authors would like to acknowledge Bio4Energy, a strategic research environment appointed by the Swedish government, for supporting this work. Support for this work was also provided by the CTQ2013-41006-R and CTQ2016-76608-R projects from the Ministry of Economy and Competitiveness and the PROMETEOII/2014/007 project from the Valencian Community Government (Spain).

We have deposited weakly textured substoichiometric NbB2-x thin films by magnetron sputtering from an NbB2 target. The films exhibit superhardness (42 +/- 4 GPa), previously only observed in overstoichiometric TiB2 thin films, and explained by a self-organized nanostructuring, where thin TiB2 columnar grains hinder nucleation and slip of dislocations and a B-rich tissue phase between the grains prevent grain-boundary sliding. The wide homogeneity range for the NbB2 phase allows a similar ultra-thin B-rich tissue phase to form between thin (5-10 nm) columnar NbB2-x grains also for films with a B/Nb atomic ratio of 1.8, as revealed here by analytical aberration-corrected scanning transmission electron microscopy. Furthermore, a coefficient of friction of 0.16 is measured for an NbB2-x film sliding against stainless steel with a wear rate of 5 x 10(-7) mm(3)/Nm. X-ray photoelectron spectroscopy results suggest that the low friction is due to the formation of a lubricating boric acid film. ; Funding Agencies|Vinnova (Swedish Governmental Agency for Innovation Systems) through the VINN Excellence Centre FunMat; Swedish Foundation of Strategic Research through the Synergy Grant FUNCASE; Knut and Alice Wallenberg Foundation

We investigate the interfaces and polarity domains at the atomic scale in epitaxial AlN and GaN/AlN grown by hot-wall metal organic chemical vapor epitaxy on the carbon face of SiC. X-ray diffraction, potassium hydroxide (KOH) wet chemical etching, and scanning transmission electron microscopy combined provide an in-depth understanding of polarity evolution with the film thickness, which is crucial to optimize growth. The AlN grown in a 3D mode is found to exhibit N-polar pyramid-type structures at the AlN-SiC interface. However, a mixed N-polar and Al-polar region with Al-polarity domination along with inverted pyramid-type structures evolve with increasing film thickness. We identify inclined inversion domain boundaries and propose that incorporation of oxygen on the & lang;40-41 & rang; facets of the N-polar pyramids causes the polarity inversion. We find that mixed-polar AlN is common and easily etched and remains undetected by solely relying on KOH etching. Atomic scale electron microscopy is, therefore, needed to accurately determine the polarity. The polarity of GaN grown on mixed-polar AlN is further shown to undergo complex evolution with the film thickness, which is discussed in the light of growth mechanisms and polarity determination methods. ; Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA)Vinnova [2016-05190]; Linkoeping University; Chalmers University of Technology; ABB; EricssonEricsson; Epiluvac; FMV; Gotmic; Hexagem; On Semiconductor; Saab; SweGaN; UMS; Swedish Research Council VRSwedish Research Council [2016-00889]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-055, RIF 14-0074, EM16-0024]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkping University, Faculty Grant SFO Mat LiU [2009-00971]

Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiN(x)masks. A liquid Ga target was sputtered in a mixture gas of Ar and N-2, ranging the N(2)partial pressure (P-N) ratio from 100% to 50%. The growth of NRs shows a strong correlation withP(N)on the selectivity, coalescence, and growth rate of NRs in both radial and axial directions. The growth rate of NRs formed inside the nanoholes increases monotonically withP(N). TheP(N)ratio between 80% and 90% was found to render both a high growth rate and high selectivity. When theP(N)ratio was below 80%, multiple NRs were formed in the nanoholes. For aP(N)ratio higher than 90%, parasitic NRs were grown on the mask. An observed dependence of growth behavior upon theP(N)ratio is attributed to a change in the effective Ga/N ratio on the substrate surface, as an effect of impinging reactive species, surface diffusivity, and residence time of adatoms. The mechanism of NR growth control was further investigated by studying the effect of nanoholes array pitch and growth temperature. The surface diffusion and the direct impingement of adatoms were found to be the dominant factors affecting the lateral and axial growth rates of NR, respectively, which were well elucidated by the collection area model. ; Funding Agencies|Energimyndigheten [46658-1]; VetenskapsradetSwedish Research Council [2018-04198]; Stiftelsen Olle Engkvist ByggmastareSwedish Research Council [197-0210]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Energimyndigheten

Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. Two nanolithographic methods, nanosphere lithography (NSL) and focused ion beam lithography (FIBL), were applied to pattern Si substrates with TiNx masks. The growth temperature was optimized for achieving selectivity and well-faceted nanorods grown onto the NSL-patterned substrates. With increasing temperature from 875 to 985 °C, we observe different growth behaviors and associate them with selective insensitive, diffusion-dominated, and desorption-dominated zones. To further achieve site-specific and diameter control, these growth parameters were transferred onto FIBL-patterned substrates. Further investigation into the FIBL process through tailoring of milling current and time in combination with varying nanorod growth temperature, suggests that minimization of mask and substrate damage is the key to attain uniform, well-defined, single, and straight nanorods. Destruction of the mask results in selective area growth failure, while damage of the substrate surface promotes inclined nanorods grown into the openings, owning to random oriented nucleation. ; Funding agencies: Swedish Research Council (VR) [621-2012-4420, 621-2013-5360, 2016-04412]; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program; Swedish Foundation for Strategic Research (SSF) [RIF 14-0074]; Sw

Catalystless growth of InxAl1-xN core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl1-xN nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl1-xN film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl1-xN is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl1-xN[0001]//Si[111] and InxAl1-xN[11 (2) over bar0]//Si[1 (1) over bar0] by removing the native SiOx layer from the substrate. ; Funding Agencies|Swedish Research Council (VR) [621-2012-4420]; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program; Knut and Alice Wallenberg Foundation

The effect of Mg doping on the microstructure of InN epitaxial films in relation to their free-charge carrier properties has been investigated by transmission electron microscopy (TEM) and aberration corrected scanning TEM. We observe a direct correlation between Mg concentration and the formation of stacking faults. The threading dislocation density is found to be independent of Mg concentration. The critical Mg concentration for the on-set of stacking faults formation is determined and found to correlate with the switch from p- to n-type conductivity in InN. Potential mechanisms involving stacking faults and point defect complexes are invoked in order to explain the observed conductivity reversal. Finally, the stacking faults are structurally determined and their role in the reduction of the free electron mobility in highly doped InN: Mg is discussed. (C) 2015 AIP Publishing LLC. ; Funding Agencies|Swedish Research Council (VR) [2008-405, 2012-4359, 2013-5580, 642-2013-8020]; ERC [258509]; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program [2011-03486]; Swedish Foundation for Strategic Research (SSF) [FFL12-0181]; National Basic Research Program of China [2012CB619300]; National Natural Science Foundation of China [61225019, 61376060]

We report structure, vibrational properties, and weak antilocalization-induced quantum correction to magnetoconductivity in single-crystal Bi2GeTe4. Surface band-structure calculations show a single Dirac cone corresponding to topological surface states in Bi2GeTe4. An estimated phase coherence length, lΦ ~ to 143 nm and prefactor α~-1.54 from Hikami-Larkin-Nagaoka fitting of magnetoconductivity describe the quantum correction to conductivity. An anomalous temperature dependence of A1g Raman modes confirms enhanced electron-phonon interactions. Our results establish that electrons of the topological state can interact with the phonons involving the vibrations of Bi-Te in Bi2GeTe4. ; Funding Agencies|CSIRCouncil of Scientific & Industrial Research (CSIR) - India; SERBDepartment of Science & Technology (India)Science Engineering Research Board (SERB), India [CRG/2018/002197]; DST India grant [DST/INT/SWD/VR/P-18/2019]; Swedish Research Council (VR)Swedish Research Council [2016-03365, 2018-07070]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program [KAW 2020.0196]; Electron Microscopy Laboratory at Linkoping University; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Swedish Energy AgencySwedish Energy AgencyMaterials & Energy Research Center (MERC) [46519-1]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [RIF 14-0074]

A vacancy-ordered MXene, Mo1.33CTz, obtained from the selective etching of Al and Sc from the parent i-MAX phase (Mo2/3Sc1/3)(2)AlC has previously shown excellent properties for supercapacitor applications. Attempts to synthesize the same MXene from another precursor, (Mo2/3Y1/3)(2)AlC, have not been able to match its forerunner. Herein, we show that the use of an AlY2.3 alloy instead of elemental Al and Y for the synthesis of (Mo2/3Y1/3)(2)AlC i-MAX, results in a close to 70% increase in sample purity due to the suppression of the main secondary phase, Mo3Al2C. Furthermore, through a modified etching procedure, we obtain a Mo1.33CTz MXene of high structural quality and improve the yield by a factor of 6 compared to our previous efforts. Free-standing films show high volumetric (1308 F cm(-3)) and gravimetric (436 F g(-1)) capacitances and a high stability (98% retention) at the level of, or even beyond, those reported for the Mo1.33CTz MXene produced from the Sc-based i-MAX. These results are of importance for the realization of high quality MXenes through use of more abundant elements (Y vs. Sc), while also reducing waste (impurity) material and facilitating the synthesis of a high-performance material for applications. ; Funding Agencies|Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0004]; KAW Foundation; Swedish Research CouncilSwedish Research Council [2016-04412]; Swedish Foundation for Strategic Research (SSF) through the Research Infrastructure Fellow program [RIF 14-0074]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

Materials with tailored properties are crucial for high performance electronics applications. Hybrid materials composed of inorganic and organic components can possess unique merits for broad application by synergy between the advantages the respective material type offers. Here we demonstrate a novel electrochemical polymerization (EP) enabled by a 2D transition metal carbide MXene for obtaining conjugated polymer-MXene composite films deposited on conducting substrates without using traditional electrolytes, indispensable compounds for commonly electrochemical polymerization. The universality of the process provides a novel approach for EP allowing fast facile process for obtaining different new polymer/MXene composites with controlled thickness and micro-pattern. Furthermore, high performance microsupercapacitors and asymmetric microsupercapacitors are realized based on the excellent composites benefiting from higher areal capacitance, better rate capabilities and lower contact resistance than conventional electropolymerized polymers. The AMSCs exhibit a maximum areal capacitance of 69.5 mF cm(-2), an ultrahigh volumetric energy density (250.1 mWh cm(-3)) at 1.6 V, and excellent cycling stability up to 10000 cycles. The excellent electrochemical properties of the composite polymerized with MXene suggest a great potential of the method for various energy storage applications. ; Funding Agencies|Swedish Energy Agency [EM 42033-1]; Swedish Government Strategic Research Area in Material Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [200900971]; Swedish Research Council [201704123]; SSF Research Infrastructure Fellow program [RIF 14-0074]; SSF Synergy program [EM16-0004]; Knut and Alice Wallenberg (KAW) Foundation [KAW 2015.0043]; National Natural Science Foundation of China [61774077]; Open Fund of the State Key Laboratory of Luminescent Materials and Devices [2018-skllmd-12]; Fundamental Research Funds for the Central Universities

We report the synthesis and characterization of a new laminated i-MAX phase, (V2/3Sc1/3)(2)AlC, with in-plane chemical ordering between the M-elements. We also present evidence for the solid solution (V2-xScx)(2)AlC, where x amp;lt;= 0.05. Chemical etching of the Al and Sc results in a two-dimensional (2D) MXene counterpart: V2-xC from the latter phase. Furthermore, etching with HF yields single-sheet MXene of flat morphology, while LiF + HCl gives MXene scrolls. We also show a 4x reduction in etching time for (V2-xScx)(2)AlC compared to V2AlC, suggesting that traces of Sc changes the phase stability, and make the material more susceptible to etching. The results show a path for improved control of MXene synthesis and morphology, which may be applicable also for other MAX/MXene systems. ; Funding Agencies|Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0004]; Research Infrastructure Fellow program [RIF 14-0074]; Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Swedish Research councilSwedish Research Council [642-2013-8020, 2016-04412]; [KAW 2015.0043]

Nanostructure formation via surface-diffusion-mediated segregation of ZrN and AIN in Zr1-xAlxN films during high mobility growth conditions is investigated for 0 amp;lt;= x amp;lt;= 1. The large immiscibility combined with interfacial surface and strain energy balance resulted in a hard nanolabyrinthine lamellar structure with well-defined (semi) coherent c-ZrN and w-AlN domains of sub-nm to similar to 4 nm in 0.2 amp;lt;= x amp;lt;= 0.4 films, as controlled by atom mobility. For high AlN contents (x amp;gt; 0.49) Al-rich ZrN domains attain wurtzite structure within fine equiaxed nanocomposite wurtzite lattice. Slow diffusion in wurtzite films points towards crystal structure dependent driving force for decomposition. The findings of unlikelihood of isostructural decomposition in c-Zr1-xAlxN, and stability of w-Zr1-xAlxN (in large x films) is complemented with first principles calculations. ; Funding Agencies|Swedish Governmental Agency for Innovation Systems (Vinnova) through the VINNMER Grant [2011-03464]; Knut and Wallenberg Foundation

Two-dimensional (2D) Mo1.33C MXene renders great potential for energy storage applications and is mainly studied in the sulfuric acid (H2SO4) electrolyte. However, H2SO4 limits the electrode potential to 0.9 V for symmetric devices and 1.3 V for asymmetric devices. Herein, we explore the electrochemical behavior of Mo1.33C MXene in LiCl electrolyte. In comparison to H2SO4, LiCl electrolyte is a neutral salt with high solubility at room temperature and low hazardousness. The analysis shows a volumetric capacitance of 815 Fcm(-3) at a scan rate of 2 mVs(-1) with a large operating potential window of -1.2 to +0.3V (vs. Ag/AgCl). This is further exploited to construct MXene-based asymmetric supercapacitors Mo1.33C//MnxOn, and the electrochemical performance is evaluated in 5M LiCl electrolyte. Owing to the wide voltage widow of the Mo1.33C//MnxOn devices (2V) and high packing density of the electrodes, we have achieved a volumetric energy density of 58 mWh/cm(3), a maximum power density of 31 Wcm(-3) and retained 92% of the initial capacitance after 10,000 charge/discharge cycles at 10 A g(-1). One of the main value propositions of this work, aside from the high energy density, is the outstanding columbic efficiency (100%), which ensures excellent cyclic stability and is highly desirable for practical applications. ; Funding Agencies|Knut and Alice Wallenberg (KAW) FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0004]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; VinnovaVinnova; Swedish Strategy Group for EU-Coordination [2018-02677]; KAW Foundation

This review celebrates the width and depth of electron microscopy methods and how these have enabled massive research efforts on MXenes. MXenes constitute a powerful recent addition to 2-dimensional materials, derived from their parent family of nanolaminated materials known as MAX phases. Owing to their rich chemistry, MXenes exhibit properties that have revolutionized ranges of applications, including energy storage, electromagnetic interference shielding, water filtering, sensors, and catalysis. Few other methods have been more essential in MXene research and development of corresponding applications, compared with electron microscopy, which enables structural and chemical identification at the atomic scale. In the following, the electron microscopy methods that have been applied to MXene and MAX phase precursor research are presented together with research examples and are discussed with respect to advantages and challenges. ; Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-04412]; Knut and Alice Wallenbergs FoundationKnut & Alice Wallenberg Foundation [KAW 2015.0043]; Swedish Foundation for Strategic Research (SSF) through the Research Infrastructure Fellow program [RIF 14-0074]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Link_oping University [2009 00971]