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Metal halide perovskites have shown rapid development in various fields such as photovoltaics, photodetectors, light-emitting diodes (LEDs), and optically pumped lasers owing to their superior optoelectronic properties. Here, we review the basic optoelectronic properties of halide perovskites from a photophysical perspective. We highlight that halide perovskites are promising in various optoelectronic devices functioning at a wide range of carrier densities. We discuss optically and electrically generated carrier density under two different excitation modes [continuous wave (CW) and pulsed] as well as the impact of carrier density on the optoelectronic behavior of perovskites. Moreover, we discuss lasing actions at high carrier densities and summarize key rules to evaluate the lasing actions. Last, we provide an outlook on perovskite-based electrically pumped lasers. ; Funding Agencies|ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1, 44651-1]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

We introduce a simple and low-cost approach-drop-coating method-for preparation of in-situ self-assembled perovskite nanocrystals for efficient light-emitting diodes (LEDs). The photoluminescence (PL) spectrum of the self-assembled NFPI4 nanocrystals thin film prepared by the drop-coating method shows blue shift compared with that of the typical NFPI4 thin film prepared by the spin-coating method. In addition, the PL spectra of these self-assembled nanocrystals are tuned from 765 to 725 nm by changing usage amounts of the perovskite precursor solution. More importantly, efficient LEDs with external quantum efficiencies up to 6.8% are achieved based on these self-assembled NFPI4 nanocrystals. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE) ; Funding Agencies|ERC Starting Grant [717026]; Carl Tryggers Stiftelse; China Scholarship Council; European Commission Marie Sklodowska-Curie Actions [691210]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

The development of perovskite emitters, their use in light-emitting devices, and the challenges in enhancing the efficiency and stability, as well as reducing the potential toxicity of this technology are discussed in this Review. Metal halide perovskites have shown promising optoelectronic properties suitable for light-emitting applications. The development of perovskite light-emitting diodes (PeLEDs) has progressed rapidly over the past several years, reaching high external quantum efficiencies of over 20%. In this Review, we focus on the key requirements for high-performance PeLEDs, highlight recent advances on materials and devices, and emphasize the importance of reliable characterization of PeLEDs. We discuss possible approaches to improve the performance of blue and red PeLEDs, increase the long-term operational stability and reduce toxicity hazards. We also provide an overview of the application space made possible by recent developments in high-efficiency PeLEDs. ; Funding Agencies|European Research Council Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; UK Engineering and Physical Sciences Research CouncilEngineering & Physical Sciences Research Council (EPSRC); Joint Research Program between China and the European Union [2016YFE0112000]; National Key Research and Development Program of China [2016YFB0401600]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [21975220, 91833303, 91733302, 51911530155]

Light-emitting diodes (LEDs) based on organic-inorganic hybrid perovskites, in particular, 3D and quasi-2D ones, are in the fast development and their external quantum efficiencies (EQEs) have exceeded 10%, making them competitive candidates toward large-area and low-cost light-emitting applications allowing printing techniques. Similar to other LED categories, light out-coupling efficiency is an important parameter determining the EQE of perovskite LEDs (PeLEDs), which, however, is scarcely studied, limiting further efficiency improvement and understanding of PeLEDs. In this work, for the first time, optical energy losses in PeLEDs are investigated through systematic optical simulations, which reveal that the 3D and quasi-2D PeLEDs can achieve theoretically maximum EQEs of approximate to 25% and approximate to 20%, respectively, in spite of their high refractive indices. These results are consistent with the reported experimental data. This work presents primary understanding of the optical energy losses in PeLEDs and will spur new developments in the aspects of device engineering and light extraction techniques to boost the EQEs of PeLEDs. ; Funding Agencies|ERC [717026]; Carl Tryggers Stiftelse; European Commission [691210]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; National Basic Research Program of China [2016YFE0112000]; European Union [2016YFE0112000]; State Key Laboratory of Luminescent Materials and Devices at South China University of Technology [2017-skllmd-05]; State Key Lab of Silicon Materials at Zhejiang University [SKL2017-03]; China Scholarship Council [201506920047]; [2016-02051]

Perovskite light-emitting diodes (PeLEDs) have recently shown significant progress with external quantum efficiencies (EQEs) exceeding 20%. However, PeLEDs with pure-red (620-660 nm) light emission, an essential part for full-color displays, remain a great challenge. Herein, a general approach of spacer cation alloying is employed in Ruddlesden-Popper perovskites (RPPs) for efficient red PeLEDs with precisely tunable wavelengths. By simply tuning the alloying ratio of dual spacer cations, the thickness distribution of quantum wells in the RPP films can be precisely modulated without deteriorating their charge-transport ability and energy funneling processes. Consequently, efficient PeLEDs with tunable emissions between pure red (626 nm) and deep red (671 nm) are achieved with peak EQEs up to 11.5%, representing the highest values among RPP-based pure-red PeLEDs. This work opens a new route for color tuning, which will spur future developments of pure-red or even pure-blue PeLEDs with high performance. ; Funding Agencies|ERCEuropean Research Council (ERC)European Commission [717026]; Swedish Research Council VRSwedish Research Council [2018-07109]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Nanyang Technological UniversityNanyang Technological University [M4080514]; Ministry of Education, SingaporeMinistry of Education, Singapore [MOE2019-T2-1-006, MOE-T2EP50120-0004]; National Research Foundation (NRF), SingaporeNational Research Foundation, Singapore [NRF-NRFI2018-04]; NSFCNational Natural Science Foundation of China (NSFC) [61774077]; Key Projects of Joint Fund of Basic and Applied Basic Research Fund of Guangdong Province [2019B1515120073, 2019B090921002, 2020A1414010036]; Guangzhou Key laboratory of Vacuum Coating Technologies and New Energy Materials Open Projects Fund [KFVE20200006]; China Postdoctoral Science FoundationChina Postdoctoral Science Foundation [2020M673055]; Science and Technology Planning Project of Guangzhou, China [201605030008]; Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities [21621008]

Bandgap tuning through mixing halide anions is one of the most attractive features for metal halide perovskites. However, mixed halide perovskites usually suffer from phase segregation under electrical biases. Herein, we obtain high-performance and color-stable blue perovskite LEDs (PeLEDs) based on mixed bromide/ chloride three-dimensional (3D) structures. We demonstrate that the color instability of CsPb(Br1-xClx)(3) PeLEDs results from surface defects at perovskite grain boundaries. By effective defect passivation, we achieve color-stable blue electroluminescence from CsPb(Br1-xClx)(3) PeLEDs, with maximum external quantum efficiencies of up to 4.5% and high luminance of up to 5351 cd m(-2) in the sky-blue region (489 nm). Our work provides new insights into the color instability issue of mixed halide perovskites and can spur new development of high-performance and color-stable blue PeLEDs. ; Funding Agencies|ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1, 44651-1]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [200900971]; China Scholarship CouncilChina Scholarship Council

Despite quick development of perovskite light-emitting diodes (PeLEDs) during the past few years, the fundamental mechanisms on how ion migration affects device efficiency and stability remain unclear. Here, it is demonstrated that the dynamic redistribution of mobile ions in the emissive layer plays a key role in the performance of PeLEDs and can explain a range of abnormal behaviours commonly observed during the device measurement. The dynamic redistribution of mobile ions changes charge-carrier injection and leads to increased recombination current; at the same time, the ion redistribution also changes charge transport and results in decreased shunt resistance current. As a result, the PeLEDs show hysteresis in external quantum efficiencies (EQEs) and radiance, that is, higher EQEs and radiance during the reverse voltage scan than during the forward scan. In addition, the changes on charge injection and transport induced by the ion redistribution also well explain the rise of the EQE/radiance values under constant driving voltages. The argument is further rationalized by adding extra formamidinium iodide (FAI) into optimized PeLEDs based on FAPbI(3), resulting in more significant hysteresis and shorter operational stability of the PeLEDs. ; Funding Agencies|ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Energy Agency EnergimyndighetenSwedish Energy Agency [48758-1, 44651-1]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; NSFCNational Natural Science Foundation of China (NSFC) [61774077]; Research and Development Program in Key Areas of Guangdong Province [2019B1515120073, 2019B090921002, 2019B010132004]; China Scholarship CouncilChina Scholarship Council

Ruddlesden-Popper perovskites (RPPs), consisting of alternating organic spacer layers and inorganic layers, have emerged as a promising alternative to 3D perovskites for both photovoltaic and light-emitting applications. The organic spacer layers provide a wide range of new possibilities to tune the properties and even provide new functionalities for RPPs. However, the preparation of state-of-the-art RPPs requires organic ammonium halides as the starting materials, which need to be ex situ synthesized. A novel approach to prepare high-quality RPP films through in situ formation of organic spacer cations from amines is presented. Compared with control devices fabricated from organic ammonium halides, this new approach results in similar (and even better) device performance for both solar cells and light-emitting diodes. High-quality RPP films are fabricated based on different types of amines, demonstrating the universality of the approach. This approach not only represents a new pathway to fabricate efficient devices based on RPPs, but also provides an effective method to screen new organic spacers with further improved performance. ; Funding Agencies|ERC Starting Grant [717026]; National Natural Science Foundation of China [51472164, 61704077]; 1000 Talents Program for Young Scientists of China; Shenzhen Peacock Plan [KQTD2016053112042971]; Educational Commission of Guangdong Province [2015KGJHZ006, 2016KCXTD006]; Science and Technology Planning Project of Guangdong Province [2016B050501005]; Natural Science Foundation of SZU [000050]; Joint NTU-LiU Ph.D. programme on Materials and Nanoscience; European Commission Marie Sklodowska-Curie Actions [691210]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFOMat-LiU) [2009-00971]; JSPS-NTU Joint Research Project [M4082176]; Ministry of Education Tier 2 [MOE 2017-T2-2-002]; Singapore National Research Foundation [NRF-CRP14-2014-03, NRF-NRFI-2018-04]

To achieve high-performance perovskite light-emitting diodes (PeLEDs), an appropriate functional layer beneath the perovskite emissive layer is significantly important to modulate the morphology of the perovskite film and to facilitate charge injection and transport in the device. Herein, for the first time, we report efficient n-i-p structured PeLEDs using solution-processed SnO2 as an electron transport layer. Three-dimensional perovskites, such as CH(NH2)(2)PbI3 and CH3NH3PbI3, are found to be more chemically compatible with SnO2 than with commonly used ZnO. In addition, SnO2 shows good transparency, excellent morphology and suitable energy levels. These properties make SnO2 a promising candidate in both three-and low-dimensional PeLEDs, among which a high external quantum efficiency of 7.9% has been realized. Furthermore, interfacial materials that are widely used to improve the device performances of ZnO-based PeLEDs are also applied on SnO2-based PeLEDs and their effects have been systematically studied. In contrast to ZnO, SnO2 modified by these interfacial materials shows detrimental effects due to photoluminescence quenching. ; Funding Agencies|ERC [717026]; Carl Tryggers Stiftelse; China Scholarship Council; European Commission Marie Sklodowska-Curie Actions [691210]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Vinnova; Marie Sklodowska-Curie Fellow [2016-02051]; State Key Laboratory of Luminescent Materials and Devices at South China University of Technology [2017-skllmd-05]; State Key Lab of Silicon Materials at Zhejiang University [SKL2017-03]

Semiconductor quantum dots (QDs) are among the most promising next-generation optoelectronic materials. QDs are generally obtained through either epitaxial or colloidal growth and carry the promise for solution-processed high-performance optoelectronic devices such as light-emitting diodes (LEDs), solar cells, etc. Herein, a straightforward approach to synthesize perovskite QDs and demonstrate their applications in efficient LEDs is reported. The perovskite QDs with controllable crystal sizes and properties are in situ synthesized through one-step spin-coating from perovskite precursor solutions followed by thermal annealing. These perovskite QDs feature size-dependent quantum confinement effect (with readily tunable emissions) and radiative monomolecular recombination. Despite the substantial structural inhomogeneity, the in situ generated perovskite QDs films emit narrow-bandwidth emission and high color stability due to efficient energy transfer between nanostructures that sweeps away the unfavorable disorder effects. Based on these materials, efficient LEDs with external quantum efficiencies up to 11.0% are realized. This makes the technologically appealing in situ approach promising for further development of state-of-the-art LED systems and other optoelectronic devices. ; Funding Agencies|ERC Starting Grant [717026]; Carl Tryggers Stiftelse; European Commission Marie SklodowskaCurie Actions [691210]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; China Scholarship Council

Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 degrees C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of gamma -CsPbI3 films at 100 degrees C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications. Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of gamma -CsPbI3 films at 100C and demonstrate a light-emitting diode with an external quantum efficiency of 10.4% with suppressed efficiency roll-off. ; Funding Agencies|Major Research Plan of the National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [91733302]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [51703094, 61935017, 61974066]; Natural Science Foundation of Jiangsu Province, ChinaNatural Science Foundation of Jiangsu Province [BK20170991]; National Science Fund for Distinguished Young ScholarsNational Natural Science Foundation of China (NSFC)National Science Fund for Distinguished Young Scholars [61725502]; Major Program of Natural Science Research of Jiangsu Higher Education Institutions of China [18KJA510002]; National Key Research and Development Program of China [2018YFB0406704]; Natural Science Fund for Colleges and Universities in Jiangsu Province of China [17KJB150023]; ERC Starting GrantEuropean Research Council (ERC) [717026]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Marie Skodowska-Curie [798861]; Linkoping University