Suchergebnisse

The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium-gallium-zinc-oxide transistors, to create complementary metal-oxide-semiconductor-like circuits. However, the performance and stability of perovskite-based transistors do not yet match their n-type counterparts, which limit their broader application. Here we report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin triiodide semiconducting layers that have moderate hole concentrations and high Hall mobilities. The perovskite channels are formed by engineering the film composition and crystallization process using a tin-fluoride-modified caesium-iodide-rich precursor with lead substitution. The optimized transistors exhibit field-effect hole mobilities of over 50 cm(2) V-1 s(-1) and on/off current ratios exceeding 10(8), as well as high operational stability and reproducibility. By optimizing the doping and crystallization behaviour of solution-processed metal halide perovskite thin films, p-channel transistors with mobilities of 50 cm(2) V-1 s(-1) and on/off ratios of 10(8) can be fabricated. ; Funding Agencies|Ministry of Science and ICT through the National Research Foundation - Korean government [2021R1A2C3005401, 2020R1A4A1019455, 2020M3F3A2A01085792, 2020M3D1A1110548, 2020R1A2C4001617]; Samsung Display CorporationSamsung

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI(3)) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm(2) V-1 s(-1), current on/off ratios exceeding 10(7), and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits. Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm(2)V(-1)S(-1), which can be integrated with commercial metal oxide transistors on a single chip. ; Funding Agencies|Ministry of Science and ICT through the National Research Foundation - Korean government [2021R1A2C3005401, 2020R1A4A1019455]; Samsung Display CorporationSamsung