Field effect enhancement in buffered quantum nanowire networks
arXiv:1802.07808v2 ; III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers, where Sb is used as a surfactant. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase-coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications. ; The project was supported by Microsoft Station Q, the European Research Council (ERC) under the grant agreement No.716655 (HEMs-DAM), the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No 722176, the Danish National Science Research Foundation and the Villum Foundation. SMS acknowledges funding from >Programa Internacional de Becas >la Caixa>-Severo Ochoa>. JA and SMS also acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, Grant no. SEV-2013-0295) and is funded by the CERCA Programme / Generalitat de Catalunya.