Suchergebnisse

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over-stoichiometry in nitrogen (CrN1+delta) rock-salt structure is obtained. A p-type conduction is observed with nitrogen-rich CrN combined with aluminum doping. The Cr0.96Al0.04N1.17 film exhibited a high Seebeck coefficient and a sufficient power factor at 300 degrees C. These results are a starting point for designing p-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale. (C) 2018 The Japan Society of Applied Physics ; Funding Agencies|European Research Council under the European Communitys Seventh Framework Programme (FP)/ERC [335383]; Swedish Foundation for Strategic Research (SSF) through the Future Research Leaders 5 program; Swedish Research Council (VR) [621-2012-4430, 2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; M.ERA-NET project MC2 - French ANR program [ANR-13-MERA-0002-02]; CTEC project [1305-00002B]

A two-step synthesis approach was utilized to grow CaMnO3 on M-, R- and C-plane sapphire substrates. Radio-frequency reactive magnetron sputtering was used to grow rock-salt-structured (Ca, Mn)O followed by a 3-h annealing step at 800 degrees C in oxygen flow to form the distorted perovskite phase CaMnO3. The effect of temperature in the post-annealing step was investigated using x-ray diffraction. The phase transformation to CaMnO3 started at 450 degrees C and was completed at 550 degrees C. Films grown on R- and C-plane sapphire showed similar structure with a mixed orientation, whereas the film grown on M-plane sapphire was epitaxially grown with an out-of-plane orientation in the [202] direction. The thermoelectric characterization showed that the film grown on M-plane sapphire has about 3.5 times lower resistivity compared to the other films with a resistivity of 0.077cm at 500 degrees C. The difference in resistivity is a result from difference in crystal structure, single orientation for M-plane sapphire compared to mixed for R- and C-plane sapphire. The highest absolute Seebeck coefficient value is -350 mu VK-1 for all films and is decreasing with temperature. ; Funding Agencies|Swedish Foundation for Strategic Research (SSF) through the Future Research Leaders 5 program; Swedish Research Council (VR) [2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program; European Research Council under the European Communitys Seventh Framework Programme (FP7 = 2007-2013) ERC Grant [335383]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

The knowledge of lattice thermal conductivity of materials under realistic conditions is vitally important since many modern technologies require either high or low thermal conductivity. Here, we propose a theoretical model for determining lattice thermal conductivity, which takes into account the effect of microstructure. It is based on ab initio description that includes the temperature dependence of the interatomic force constants and treats anharmonic lattice vibrations. We choose ScN as a model system, comparing the computational predictions to the experimental data by time-domain thermoreflectance. Our experimental results show a trend of reduction in lattice thermal conductivity with decreasing domain size predicted by the theoretical model. These results suggest a possibility to control thermal conductivity by microstructural tailoring and provide a predictive tool for the effect of the microstructure on the lattice thermal conductivity of materials based on ab initio calculations. ; Funding Agencies|European Research Council under the European Communitys Seventh Framework Programme [FP/2007-2013]; ERC [335383]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Swedish Research Council [2012-4430, 2016-03365, 330-2014-6336, 2014-4750, 637-2013-7296]; Linnaeus Environment LiLi-NFM; Swedish Foundation for Strategic Research (SSF) through the Future Research Leaders 5 Program; NanoCaTe project (FP7) [604647]; National University of Singapore Startup Grant

ScN-rich (Sc,Nb)N solid solution thin films have been studied, motivated by the promising thermoelectric properties of ScN-based materials. Cubic Sc1-xNbxN films for 0 amp;lt;= x amp;lt;= 0.25 were epitaxially grown by DC reactive magnetron sputtering on a c-plane sapphire substrate and oriented along the (111) orientation. The crystal structure, morphology, thermal conductivity, and thermoelectric and electrical properties were investigated. The ScN reference film exhibited a Seebeck coefficient of -45 mu V/K and a power factor of 6 x 10(-4) W/m K-2 at 750K. Estimated from room temperature Hall measurements, all samples exhibit a high carrier density of the order of 10(21) cm(-3). Inclusion of heavy transition metals into ScN enables the reduction in thermal conductivity by an increase in phonon scattering. The Nb inserted ScN thin films exhibited a thermal conductivity lower than the value of the ScN reference (10.5W m(-1) K-1) down to a minimum value of 2.2 Wm(-1) K-1. Insertion of Nb into ScN thus resulted in a reduction in thermal conductivity by a factor of similar to 5 due to the mass contrast in ScN, which increases the phonon scattering in the material. Published by AIP Publishing. ; Funding Agencies|European Research Council under the European Community [335383]; Swedish Foundation for Strategic Research (SSF) through the Future Research Leaders 5 program; Swedish Research Council (VR) [621-2012-4430, 2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; project NanoCaTe (FP7-NMP) [604647]; project CTEC [1305-00002B]

For applications in energy harvesting and environmentally friendly cooling, and for power sources in remote or portable applications, it is desired to enhance the efficiency of thermoelectric materials. One strategy consists of reducing the thermal conductivity while increasing or retaining the thermoelectric power factor. An approach to achieve this is doping to enhance the Seebeck coefficient and electrical conductivity, while simultaneously introducing defects in the materials to increase phonon scattering. Here, we use Mg ion implantation to induce defects in epitaxial ScN (111) films. The films were implanted with Mg+ ions with different concentration profiles along the thickness of the film, incorporating 0.35 to 2.2 at. % of Mg in ScN. Implantation at high temperature (600 degrees C), with few defects due to the temperature, does not substantially affect the thermal conductivity compared to a reference ScN. Samples implanted at room temperature, in contrast, exhibited a reduction of the thermal conductivity by a factor of 3. The sample doped with 2.2 at. % of Mg also showed an increased power factor after implantation. This paper thus shows the effect of ion-induced defects on thermal conductivity of ScN films. High-temperature implantation allows the defects to be annealed out during implantation, while the defects are retained for room-temperature implanted samples, allowing for a drastic reduction in thermal conductivity. ; Funding Agencies|European Research Council under the European Community [335383]; Swedish Foundation for Strategic Research through the Future Research Leaders 5 program; Swedish Research Council [2016-03365]; Knut and Alice Wallenberg Foundation through the Wallenberg Academy Fellows program; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (SFO-Mat-LiU Faculty Grant) [2009 00971]; DAE-BRNS [37(3)/14/02/2015/BRNS]