Ultrafast laser-induced phase transitions in amorphous GeSb films
4 pags., 4 figs. ; The potential for a subpicosecond amorphous-to-crystalline, disorder-to-order transition was explored by measuring the dielectric function of a-GeSb films following femtosecond laser excitation. Subpicosecond nonthermal structural changes both above and below the threshold for permanent crystallization were observed. ; The work at Harvard is supported by the National Science Foundation (Contract No. DMR-9807144) and the Army Research Office (Contract No. DAAG55-98-1-0077). A. M.-T. Kim recognizes support from the Deutscher Akademischer Auslandsdienst (DAAD) and J. Siegel from the European Union through the TMR Program (Grant No. ERB40001GT954352). ; Peer Reviewed