Suchergebnisse

Air stable n-type organic field effect transistors (OFETs) based on C60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm2/V s in ambient air. Replacing the gate dielectric material by SiO2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air. ; This research was supported by a Grant (F0004071-2007-23) from the Information Display R&D Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Commerce, Industry and Energy of the Korean Government.