CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals
The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. ; This work was supported by the European Regional Development Funds and the Spanish MINECO project SEHTOP (ENE2016-77798-C4-3-R). T.B. thanks the FI-AGAUR Research Fellowship Program, Generalitat de Catalunya (2015 FI_B 00744). This project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 712949 (TECNIOspring PLUS) and the Government of Catalonia's Agency for Business Competitiveness(ACCIÓ). S.B. acknowledges the U.S. National Science Foundation, CHE-1361741. J.L. is a Serra Hunter Fellow and is grateful to the ICREA Academia program and grants MINECO/FEDER ENE2015-63969-R and GC 2017 SGR 128 for support.