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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. ; We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-face InN layers to investigate the high-pressure behavior of the zone-center optical phonons of wurtzite InN. Linear pressure coefficients and mode Grneisen parameters are obtained, and the experimental results are compared with theoretical values obtained from ab initio lattice-dynamical calculations. Good agreement is found between the experimental and calculated results. © 2011 American Institute of Physics. ; Work supported by the Spanish MICINN (Projects MAT2010-16116, MAT2008-06873-C02-02, MAT2010-21270-C04-04, and CSD2007-00045), the Catalan Government (BE-DG 2009), and the Spanish Council for Research (PIE2009-CSIC). ; Ibanez, J.; Manjón Herrera, FJ.; Segura, A.; Oliva, R.; Cusco, R.; Vilaplana Cerda, RI.; Yamaguchi, T. (2011). High-pressure Raman scattering in wurtzite indium nitride. Applied Physics Letters. 99:119081-119083. https://doi.org/10.1063/1.3609327 ; S ; 119081 ; 119083 ; 99 ; Veal, T., McConville, C., & Schaff, W. (Eds.). (2009). Indium Nitride and Related Alloys. doi:10.1201/9781420078107 ; Gallinat, C. S., Koblmüller, G., Brown, J. S., Bernardis, S., Speck, J. S., Chern, G. D., … Wraback, M. (2006). In-polar InN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 89(3), 032109. doi:10.1063/1.2234274 ; Li, S. X., Wu, J., Haller, E. E., Walukiewicz, W., Shan, W., Lu, H., & Schaff, W. J. (2003). Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys. Applied Physics Letters, 83(24), 4963-4965. doi:10.1063/1.1633681 ; Gorczyca, I., Plesiewicz, J., Dmowski, L., Suski, T., Christensen, N. E., Svane, A., … Speck, J. S. (2008). Electronic structure and effective masses of InN under pressure. Journal of Applied Physics, 104(1), 013704. ...

S ; 119081 119083 99 ; S ; S ; S ; Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-face InN layers to investigate the high-pressure behavior of the zone-center optical phonons of wurtzite InN. Linear pressure coefficients and mode Grneisen parameters are obtained, and the experimental results are compared with theoretical values obtained from ab initio lattice-dynamical calculations. Good agreement is found between the experimental and calculated results. © 2011 American Institute of Physics. Work supported by the Spanish MICINN (Projects MAT2010-16116, MAT2008-06873-C02-02, MAT2010-21270-C04-04, and CSD2007-00045), the Catalan Government (BE-DG 2009), and the Spanish Council for Research (PIE2009-CSIC). Ibanez, J.; Manjón Herrera, FJ.; Segura, A.; Oliva, R.; Cusco, R.; Vilaplana Cerda, RI.; Yamaguchi, T. (2011). High-pressure Raman scattering in wurtzite indium nitride. Applied Physics Letters. 99:119081-119083. https://doi.org/10.1063/1.3609327 Veal, T., McConville, C., & Schaff, W. (Eds.). (2009). Indium Nitride and Related Alloys. doi:10.1201/9781420078107 Gallinat, C. S., Koblmüller, G., Brown, J. S., Bernardis, S., Speck, J. S., Chern, G. D., … Wraback, M. (2006). In-polar InN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 89(3), 032109. doi:10.1063/1.2234274 Li, S. X., Wu, J., Haller, E. E., Walukiewicz, W., Shan, W., Lu, H., & Schaff, W. J. (2003). Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys. Applied Physics Letters, 83(24), 4963-4965. doi:10.1063/1.1633681 Gorczyca, I., Plesiewicz, J., Dmowski, L., Suski, T., Christensen, N. E., Svane, A., … Speck, J. S. (2008). Electronic structure and effective masses of InN under pressure. Journal of Applied Physics, 104(1), 013704. ...