Suchergebnisse

Transparent ZnO ceramics are of interest for use as material for high-efficiency fast scintillators. Doping ZnO ceramics in order to improve complex of their properties is a promising direction. In the present research, the role of indium in the ZnO nanopowders surface interactions and in the change of microstructures and photoluminescence (PL) characteristics of sintered cera-mics is considered. Undoped and 0.13 wt% In doped ZnO ceramics are obtained by hot pressing sintering. It has been found that indium leads to the transition of initially faceted ZnO particles to rounded, contributing to good sintering with formation of diffusion active grain boundaries (GBs). Unlike ZnO ceramics, ZnO:In ceramics microstructure is characterised by the trans-crystalline mode of fracture, faceted GBs with places of zig-zag forms and predominant distribution of In at the GBs. Such indium induced modifications of GBs promote removal of point defects and reduce PL parameter α = I def /I exc in comparison with the undoped ceramics. Results characterise ZnO:In cera-mics with improved GBs properties as a prospective material for scintillators. ; The present research has been supported by the Project ERANET RUS_ ST#2017-051(Latvia) and #18-52-76002 (Russia); Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²

This work has been performed within the framework of the EUROfusion Enabling Research project: ENR-MFE19.ISSP-UL-02 "Advanced experimental and theoretical analysis of defect evolution and structural disordering in optical and dielectric materials for fusion applications". The views and opinions expressed herein do not necessarily reflect those of the European Commission. ; The effect of irradiation with GeV heavy ions (U, Au, Bi) on the structure and mechanical properties of MgO single crystals was studied. The methods of nanoindentation, dislocation mobility, optical absorption and photoluminescence (PL) spectroscopy, X-ray diffraction and atomic force microscopy were used for damage characterization. The ion-induced increase of hardness and reduction of dislocation mobility was observed. The depth profiles of hardness, dislocation mobility and PL were investigated, and the contribution of electronic and nuclear loss mechanisms was confirmed. The efficiency of damage vs. average absorbed energy for heavy and light ions was compared. The change in the mechanism of plastic deformation at indentation was observed after severe irradiation due to the immobilization of dislocations by ion-induced extended defects. The results show that MgO single crystals maintain integrity and micro-plasticity at indentation, and exhibit improved hardness after irradiation with swift heavy ions at fluences up to 7 × 1013 ions/cm2. ; EUROfusion Enabling Research project: ENR-MFE19.ISSP-UL-02; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²

Influence of the irradiation with 13.5 MeV 3He and 5 MeV 4He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (1015 ions/cm2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structure and properties. The effects of ion-induced increase of hardness and decrease of dislocation mobility are observed also beyond the ion range and possible mechanisms of such damage are discussed. ; This work has been supported by the Latvian national program IMIS2; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²

R. Zabels, I. Manika, J. Maniks, and R.Grants acknowledge the national project IMIS2, and A. Dauletbekova, M. Baizhumanov, and M. Zdorovets the Ministry of Education and Science of the Republic of Kazakhstan for the financial support. ; The emergence of dislocations and hardening of LiF crystals irradiated to high doses with 12C ions have been investigated using chemical etching, AFM, nanoindentation, and thermal annealing. At fluences ensuring the overlapping of tracks (Ф ≥6 × 1011 ions/cm2), the formation of dislocation-rich structure and ion-induced hardening is observed. High-fluence (1015 ions/cm2) irradiation with 12C ions causes accumulation of extended defects and induces hardening comparable to that reached by heavy ions despite of large differences in ion mass, energy, energy loss, and track morphology. The depth profiles of hardness indicate on a notable contribution of elastic collision mechanism (nuclear loss) in the damage production and hardening. The effect manifests at the end part of the ion range and becomes significant at high fluences (≥1014 ions/cm2). ; IMIS2; Ministry of Education and Science of the Republic of Kazakhstan; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²

I. Manika, J. Maniks and R. Zabels acknowledge the national project IMIS2. A. Dauletbekova, A. Akilbekov, M. Zdorovets and A. Seitbayev acknowledge the GF AP05134257of Ministry of Education and Science the Republic of Kazakhstan. ; Depth profiles of nanohardness and photoluminescence of F2 and F3 + centers in LiF crystals irradiated with 12 MeV 12C, 56 MeV 40Ar and 34 MeV 84Kr ions at fluences 1010–1015 ions/cm2 have been studied using laser scanning confocal microscopy, dislocation etching and nanoindentation techniques. The room temperature irradiation experiments were performed at DC-60 cyclotron (Astana, Kazakhstan). It was found that the luminescence intensity profiles of aggregate color centers at low ion fluences correlate with electronic stopping profiles. The maximum intensity of aggregate center luminescence is observed at fluence around 1013 ions/cm2 and rapidly decreases with further increase of fluence. At the highest ion fluences, the luminescence signal is registered in the end-of-range area only. The depth profiles of nanohardness and chemical etching have shown remarkable ion-induced formation of dislocations and increase of hardness which in the major part of the ion range correlate with the depth profile of electronic energy loss. An exception is the end-of-range region where strong contribution of nuclear energy loss to hardening at high fluences is observed. ; IMIS2; Ministry of Education and Science the Republic of Kazakhstan GF AP05134257; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²