Optoelectronic properties of atomically thin MoxW(1−x)S2 nanoflakes probed by spatially-resolved monochromated EELS
This article belongs to the Special Issue Luminescence Properties of Nanomaterials and Nanocomposites. ; Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoxW(1−x)S2 nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well. ; Research supported by the Spanish MICINN (PID2019-104739GB-100/AEI/10.13039/ 501100011033), Government of Aragon (project DGA E13-20R) and European Union H2020 programs "ESTEEM3" (823717), Graphene Flagship (881603), JST-CREST (JPMJCR20B1, JPMJCR20B5, JPMJCR1993) and JSPS A3 Foresight Program. ; Peer reviewed