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"Stories and personal narratives are powerful tools for engaging in self-reflection and application of critical theory in higher educational contexts. This edited text centers "name stories" as a vehicle to promote readers' understanding of social identity, oppression, and intersectionality in a variety of educational contexts from residence halls and classrooms to faculty development workshops and executive leadership board rooms. The contributors in this volume reveal how names may serve as entry points through which to foster learning and facilitate conversations about identity, power, privilege, and systems of oppression. Through an intersectional perspective, chapter authors reveal interlocking systems of oppression in education, while also providing recommendations, lessons learned, reflection questions, and calls to action for those working to transform and advance equity-minded campus climates. This unique volume is for educators at colleges and universities doing equity work, seeking ways to initiate, facilitate, and maintain rich conversations about identity"--

Altres ajuts: This project has received funding from the European Union's Horinon 2020 research and innovation programme. This work was also partially funded by the Ministerio de Economía y Competitividad. The authors also acknowledge the funding from the Academy of Finland (Grants 276376, 284548, 295777, 304666, 312294, 312297, 312551, and 314810), TEKES-the Finnish Funding Agency for Technology and Innovation. The authors also thank Dr. Stephan Suckow in AMO GmbH for fruitful discussions about photonic device behavior. ; Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene-GaSe heterojunction-based field-effect transistors with broadband photodetection from 730-1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene-semiconductor heterojunction where possible Fermi level pinning effect is considered.