Suchergebnisse

ObjectiveTo examine the influence of positive parenting and parental conflict on the coparenting alliance.BackgroundResearch indicates that child and family outcomes after divorce are affected by the quality of the coparenting relationship between parents, with many divorce education programs focusing on coparenting as a core programmatic component. Less is known about how positive parenting and parental conflict affect the coparenting alliance.MethodThis study collected online survey data from a convenience sample of divorcing parents (N = 430). Participants completed measures of parenting, parental conflict, and coparenting alliance. Regression and simple slope analyses were performed with parental conflict and positive parenting as predictors of coparenting alliance.ResultsPositive parenting and parenting conflict both predicted the coparenting alliance. Low levels of conflict predicted high levels of coparenting when positive parenting was high and moderate; however, conflict did not predict alliance when positive parenting was low.ConclusionParents who engaged in moderate to high positive parenting had the anticipated negative relationship between conflict and coparenting alliance, but this did not hold true for parents who engaged in below average positive parenting, suggesting that both parenting and conflict play a role in a resilient coparenting alliance.ImplicationsDivorcing parents' parenting skills may be important to consider when deciding on prevention and intervention efforts aimed at supporting their coparenting alliance. Therefore, divorce education programs may benefit from incorporating content related to positive parenting and parents with weaker parenting practices may need different types of intervention.

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI(3)) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm(2) V-1 s(-1), current on/off ratios exceeding 10(7), and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits. Progress on high-performance transistor employing perovskite channels has been limited to date. Here, Zhu et al. report hysteresis-free tin-based perovskite thin-film transistors with high hole mobility of 20 cm(2)V(-1)S(-1), which can be integrated with commercial metal oxide transistors on a single chip. ; Funding Agencies|Ministry of Science and ICT through the National Research Foundation - Korean government [2021R1A2C3005401, 2020R1A4A1019455]; Samsung Display CorporationSamsung