Thin film oxide-ion conducting electrolyte for near room temperature applications
Stabilized bismuth vanadate thin films are presented here as superior oxide ionic conductors, for application in solid state electrochemical devices operating near room temperature. Widely studied in the 90s in bulk form due to their unbeatable ionic conduction, this family of materials was finally discarded due to poor stability above 500 °C. Here, we however unveil the possibility of using Bi4V1.8Cu0.2O10.7 at reduced temperatures in thin film-based devices, where the material keeps its unmatched conduction properties and at the same time shows good stability over a wide oxygen partial pressure range. ; The research was supported by the Generalitat de Catalunya-AGAUR (2017 SGR 1421). This project has received funding from the European research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (ULTRASOFC, Grant Agreement number: 681146). ; Peer reviewed
