Suchergebnisse

Представляются численные и аналитические результаты изучения эффекта размерногоквантования одночастичной энтропии в двумерном электронном газе в полупроводниковых материалах с непараболичной зоной проводимости. Анализируется зависимость одночастичной энтропии от химического потенциала газа в точках резонанса и вдали от них. Показано, что при низких температурах непараболичность зоны дает малую поправку к одночастичной энтропии. Как в точке резонанса, так и вдали от нее эта поправка пропорциональна произведению коэффициента непараболичности и температуры αT. Численным путем оценивается влияние уширения уровней пространственного квантования на одночастичную энтропию. Полученные результаты представлены для разных значений температуры, степени непараболичности зоны проводимости и величиныуширения.

In this paper, we studied the effect of an electromagnetic field of an
ultrahigh frequency on the I–V characteristics of tunnel diodes. The influence of thermionic
current on the change in the ratio of the values of tunnel currents at depth and the peak
formed in the tunnel diode as a result of a strong electromagnetic field and on the
change in the ratio of the values of tunnel currents at the highest and lowest points
without exposure to a strong electromagnetic field. The I–V characteristics of a tunnel
diode under the action of a microwave field is determined based on the theory of Knott
and Demassa and the Tsu-Esaki model. The characteristics of the Tsu-Esaki and
Karlovsky models used to determine the effect of the tunnel current in the extremely
high frequency field (EHF) are shown. Chynoweth's model and Knott and Demassa's
theory have shown that in germanium-based tunnel diodes, under an extremely high
frequency (EHF) field, the amount of excess current generated in the tunnel diode
increases. According to the Tsu-Esaki theory and Knott and Demassa theory is found
to decrease the value of the differential resistance of a tunnel diode with a p-n junction
under the action of a microwave field, regardless of the type of heterostructure or
doping level. According to the Tsu-Esaki theory and Knott and Demassa found
decrease in the diffusion capacitance of a tunnel diode with a p-n junction under the
action of a microwave field, regardless of the type of heterostructure or doping level. A
decrease in the transparency coefficient due to an increase in the internal field at the
p-n junction boundary of a Ge-based tunnel diode under the action of a microwave
field has been established. A formula is determined for determining the total current
of a tunnel diode under the action of both microwave and magnetic fields, taking into
account the transparency coefficient of the tunnel diode.