Suchergebnisse

Scigaj, M. et al. ; The integration of epitaxial BaTiO3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO3/LaNiO3/SrTiO3 heterostructure is grown monolithically on Si(001). The BaTiO3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm2. This result paves the way towards the fabrication of lead-free BaTiO3 ferroelectric memories on silicon platforms. ; ICMAB-CSIC authors acknowledge financial support from the Spanish Ministry of Economy and Competitiveness, through the "Severo Ochoa" Programme for Centres of Excellence in R&D (SEV-2015-0496) and the MAT2014-56063-C2-1-R project, and from Generalitat de Catalunya (2014 SGR 734). Work at Oak Ridge National Laboratory was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division. C. H. Chao acknowledges the NSC-CSIC 2014 Summer Program in Spain for Taiwanese PhD students. I. Fina acknowledges Juan de la Cierva – Incorporación postdoctoral fellowship (IJCI-2014-19102) from the Spanish Ministry of Economy and Competitiveness of Spanish Government. INL gratefully acknowledges the European commission and the national French research agency (ANR) for funding, through the projects SITOGA (FP7-ICT-2013-11-619456), TIPS (H2020‐ICT‐02-2014‐1-644453), ANR HIRIS and ANR DIAMWAFEL. INL also acknowledges P. Regreny, C. Botella and J.-B. Goure for MBE technical assistance. ; Peer reviewed