Topological defects in topological insulators and bound states at topological superconductor vortices
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license. ; The scattering of Dirac electrons by topological defects could be one of the most relevant sources of resistance in graphene and at the boundary surfaces of a three-dimensional topological insulator (3D TI). In the long wavelength, continuous limit of the Dirac equation, the topological defect can be described as a distortion of the metric in curved space, which can be accounted for by a rotation of the Gamma matrices and by a spin connection inherited with the curvature. These features modify the scattering properties of the carriers. We discuss the self-energy of defect formation with this approach and the electron cross-section for intra-valley scattering at an edge dislocation in graphene, including corrections coming from the local stress. The cross-section contribution to the resistivity, ρ, is derived within the Boltzmann theory of transport. On the same lines, we discuss the scattering of a screw dislocation in a two-band 3D TI, like Bi1-xSbx, and we present the analytical simplified form of the wavefunction for gapless helical states bound at the defect. When a 3D TI is sandwiched between two even-parity superconductors, Dirac boundary states acquire superconductive correlations by proximity. In the presence of a magnetic vortex piercing the heterostructure, two Majorana states are localized at the two interfaces and bound to the vortex core. They have a half integer total angular momentum each, to match with the unitary orbital angular momentum of the vortex charge. © 2014 by the authors. ; This work was done with financial support from FP7/2007-2013 under the grant no. 264098—MAMA (Multifunctional Advanced Materials and Nanoscale Phenomena), MIUR (Ministero dell' Istruzione, dell' Università e della Ricerca)-Italy through the Prin-Project 2009 "Nanowire high critical temperature superconductor field-effect devices" and Futuro In Ricerca (FIRB)/2013-2015. Vincenzo Parente and Francisco Guinea acknowledge financial support from MINECO (Ministerio Economía y Competitividad), Spain, through grant FIS2011-23713, and the European Union, through grant 290846. ; Peer Reviewed