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Tris-N,N,-dimethyl-N,N -diisopropylguanidinatoindium(III) has been investigated both as a chemical vapor deposition precursor and an atomic layer deposition precursor. Although deposition was satisfactory in both cases, each report showed some anomalies in the thermal stability of this compound, warrenting further investigation, which is reported herein. The compound was found to decompose to produce diisopropylcarbodiimide both by computational modeling and solution phase nuclear magnetic resonance characterization. The decomposition was shown to have an onset at approximately 120 degrees C and had a constant rate of decomposition from 150 to 180 degrees C. The ultimate decomposition product was suspected to be bisdimethylamidoN, N,-dimethyl-N,N -diisopropylguanidinato-indium(III), which appeared to be an intractable, nonvolatile polymer. Published by the AVS. ; Funding Agencies|Swedish foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA15-0018]; COST Action [MP1402]; COST (European Cooperation in Science and Technology); Vinnova VINNMER Marie Curie incoming mobility program (Vinnova Grant) [2015-03714]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]; Swedish Research Council (VR Grant) [2016-05137_4]; Wenner-Gren foundations

This study quantitatively assessed personal exposure of 86 workers to indium compounds as total dust at 11 Japanese indium plants. The personal exposures to indium concentrations in the breathing zone during an 8 h work-shift were determined by ICP-MS. The arithmetic mean indium concentration of all the workers was 0.098 mg Indium (In)/m3, with individual values ranging from 0.0001 to 1.421 mg In/m3. There were 11 workers whose exposure to indium concentrations exceeded the American Conference of Governmental Industrial Hygienists' Threshold Limit Value-Time Weighted Average (TLV-TWA) of 0.1 mg In/m3. Based on the condition TLV-TWA

According to recent research, indium nanoparticles (NPs) are more toxic than micro-sized particles. While cases of indium lung disease have been reported worldwide, very little research has been conducted on the occupational exposure to indium NPs. Recently, an indium-related lung disease was reported in Korea, a global powerhouse for display manufacturing. In this study, we conducted an assessment ofoccupational exposure at an indium tin oxide (ITO) powder manufacturing plant, where the first case of indium lung disease in Korea occurred. Airborne dustwas obtained from a worker's breathing zone, and area sampling in the workplace environment was conducted using real-time monitoring devices. Personal samples were analyzed for the indium concentrations in total dust, respirable dust fraction, and NPs using personal NPs respiratory deposition samplers. The total indium concentration of the personal samples was lower than the threshold limit value recommended by the American Conference of Governmental Industrial Hygienists (ACGIH TLV), which was set as occupational exposure limit (OEL). However, the respirable indium concentration exceeded the recently set ACGIH TLV for the respirable fraction of indium dust. The concentration of indium NPs ranged between 0.003 and 0.010 × 10(−2) mg/m(3), accounting for only 0.4% of the total and 2.7% of the respirable indium particles. This was attributed to the aggregating of NPs at the µm sub-level. Given the extremely low fraction of indium NPs in the total and respirable dust, the current OEL values, set as the total and respirable indium concentrations, do not holistically represent the occupational exposure to indium NPs or prevent health hazards. Therefore, it is necessary to set separate OEL values for indium NPs. This study covers only the process of handling ITO powder. Therefore, follow-up studies need to be conducted on other ITO sputtering target polishing and milling processes, which typically generate more airborne NPs, to further investigate the effects of indium ...

S ; 119081 119083 99 ; S ; S ; S ; Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-face InN layers to investigate the high-pressure behavior of the zone-center optical phonons of wurtzite InN. Linear pressure coefficients and mode Grneisen parameters are obtained, and the experimental results are compared with theoretical values obtained from ab initio lattice-dynamical calculations. Good agreement is found between the experimental and calculated results. © 2011 American Institute of Physics. Work supported by the Spanish MICINN (Projects MAT2010-16116, MAT2008-06873-C02-02, MAT2010-21270-C04-04, and CSD2007-00045), the Catalan Government (BE-DG 2009), and the Spanish Council for Research (PIE2009-CSIC). Ibanez, J.; Manjón Herrera, FJ.; Segura, A.; Oliva, R.; Cusco, R.; Vilaplana Cerda, RI.; Yamaguchi, T. (2011). High-pressure Raman scattering in wurtzite indium nitride. Applied Physics Letters. 99:119081-119083. https://doi.org/10.1063/1.3609327 Veal, T., McConville, C., & Schaff, W. (Eds.). (2009). Indium Nitride and Related Alloys. doi:10.1201/9781420078107 Gallinat, C. S., Koblmüller, G., Brown, J. S., Bernardis, S., Speck, J. S., Chern, G. D., … Wraback, M. (2006). In-polar InN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 89(3), 032109. doi:10.1063/1.2234274 Li, S. X., Wu, J., Haller, E. E., Walukiewicz, W., Shan, W., Lu, H., & Schaff, W. J. (2003). Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys. Applied Physics Letters, 83(24), 4963-4965. doi:10.1063/1.1633681 Gorczyca, I., Plesiewicz, J., Dmowski, L., Suski, T., Christensen, N. E., Svane, A., … Speck, J. S. (2008). Electronic structure and effective masses of InN under pressure. Journal of Applied Physics, 104(1), 013704. ...

Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. ; We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-face InN layers to investigate the high-pressure behavior of the zone-center optical phonons of wurtzite InN. Linear pressure coefficients and mode Grneisen parameters are obtained, and the experimental results are compared with theoretical values obtained from ab initio lattice-dynamical calculations. Good agreement is found between the experimental and calculated results. © 2011 American Institute of Physics. ; Work supported by the Spanish MICINN (Projects MAT2010-16116, MAT2008-06873-C02-02, MAT2010-21270-C04-04, and CSD2007-00045), the Catalan Government (BE-DG 2009), and the Spanish Council for Research (PIE2009-CSIC). ; Ibanez, J.; Manjón Herrera, FJ.; Segura, A.; Oliva, R.; Cusco, R.; Vilaplana Cerda, RI.; Yamaguchi, T. (2011). High-pressure Raman scattering in wurtzite indium nitride. Applied Physics Letters. 99:119081-119083. https://doi.org/10.1063/1.3609327 ; S ; 119081 ; 119083 ; 99 ; Veal, T., McConville, C., & Schaff, W. (Eds.). (2009). Indium Nitride and Related Alloys. doi:10.1201/9781420078107 ; Gallinat, C. S., Koblmüller, G., Brown, J. S., Bernardis, S., Speck, J. S., Chern, G. D., … Wraback, M. (2006). In-polar InN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 89(3), 032109. doi:10.1063/1.2234274 ; Li, S. X., Wu, J., Haller, E. E., Walukiewicz, W., Shan, W., Lu, H., & Schaff, W. J. (2003). Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys. Applied Physics Letters, 83(24), 4963-4965. doi:10.1063/1.1633681 ; Gorczyca, I., Plesiewicz, J., Dmowski, L., Suski, T., Christensen, N. E., Svane, A., … Speck, J. S. (2008). Electronic structure and effective masses of InN under pressure. Journal of Applied Physics, 104(1), 013704. ...

20 pags., 7 figs., 6 tabs. ; We report, over an extended energy range, recommended angle-integrated cross sections for elastic scattering, discrete inelastic scattering processes, and the total ionization cross section for electron scattering from atomic indium. In addition, from those angle-integrated cross sections, a grand total cross section is subsequently derived. To construct those recommended cross-section databases, results from original B-spline R-matrix, relativistic convergent close-coupling, and relativistic optical-potential computations are also presented here. Electron transport coefficients are subsequently calculated, using our recommended database, for reduced electric fields ranging from 0.01 Td to 10 000 Td using a multiterm solution of Boltzmann's equation. To facilitate those simulations, a recommended elastic momentum transfer cross-section set is also constructed and presented here. ; The work of K.R.H., O.Z., and K.B. was supported by the United States National Science Foundation under Grant Nos. OAC-1834740 and PHY-1803844 and by the XSEDE supercomputer Allocation No. PHY-090031. The (D)BSR calculations were carried out on Stampede2 at the Texas Advanced Computing Center. The work of D.V.F. and I.B. was supported by the Australian Research Council and resources provided by the Pawsey Supercomputing Centre with funding from the Australian Government and the Government of Western Australia. F.B. and G.G. acknowledge partial financial support from the Spanish Ministry MICIU (Project Nos. FIS2016- 80440 and PID2019-104727-RB-C21) and CSIC (Project No. LINKA20085). This work was also financially supported, in part, by the Australian Research Council (Project No. DP180101655), the Ministry of Education, Science and Technological Development of the Republic of Serbia, and the Institute of Physics (Belgrade). ; Peer reviewed

Indium nitride (InN) is characterized by its high electron mobility, making it a ground-breaking material for high frequency electronics. The difficulty of depositing high-quality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new In(III) precursor, the first example of a homoleptic triazenide used in a vapor deposition process, was easily synthesized and purified by sublimation. Thermogravimetric analysis showed single step volatilization with an onset temperature of 145 degrees C and negligible residual mass. Strikingly, two temperature intervals with self-limiting growth were observed when depositing InN films. In the high-temperature interval, the precursor underwent a gas-phase thermal decomposition inside the ALD reaction chamber to produce a more reactive In(III) compound while retaining self-limiting growth behavior. Density functional theory calculations revealed a unique two-step decomposition process, which liberates three molecules of each propene and N-2 to give a smaller tricoordinated In(III) species. Stoichiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. The InN films deposited at 325 degrees C had a sheet resistivity of 920 Omega/sq. This new triazenide precursor enables ALD of InN for semiconductor applications and provides a new family of M-N bonded precursors for future deposition processes. ; Funding Agencies|Swedish foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg foundation through the project "Bridging the THz gap" [KAW 2013.0049]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]

We report on the use of In₂O₃nanowires with hexagonal cross section as optical whispering gallery resonators. The single-crystal In₂O₃nanowires were fabricated by an in situ thermal oxidation method. Whispering gallery modes(WGMs) in the visible spectral range were directly observed at room temperature. Due to the slight tapering of the nanowires, the energies and orders of the WGMs were modulated when excitations were scanned along the c-axis (length) of the nanowires. The experimental results were explained and fitted well with a plane wave interference model and Cauchy dispersion formula for refractive indices. ; The work is funded by the NSFC 973 projects and STCSM of China Grant Nos. 2004CB619004 and 2006CB921506. The authors thank the Australian Government Department of Innovation, Industry, Science and Research for funding this collaborative research under the International Science Linkages China Program.

School of Studies in Chemistry, Vikram University, Ujjain (M.P.) Government College, Khargone, (M.P.) Manuscript received 24 January 1973; revised 11 October 1974: accepted 28 January 1975 Formation Constants and I.R. Spectrum of Indium(III)-Lactate

Quaternary alloys enable the independent optimization of different semiconductor properties, such as the separate tuning of the band gap and the lattice constant. Nanowire core-shell structures should allow a larger range of compositional tuning as strain can be accommodated in a more effective manner than in thin films. Still, the faceted structure of the nanowire may lead to local segregation effects. Here, we explore the incorporation of indium in AlGaAs shells up to 25%. In particular, we show the effect of In incorporation on the energy shift of the AlGaInAs single-photon emitters present in the shell. We observe a redshift up to 300 meV as a function of the group-III site fraction of In. We correlate the shift with segregation at the nanoscale. We find evidence of the segregation of the group-III elements at different positions in the nanowire, not observed before. We propose a model that takes into account the strain distribution in the nanowire shell and the adatom diffusion on the nanowire facets to explain the observations. This work provides novel insights on the segregation phenomena necessary to engineer the composition of multidinary alloys. ; JSR thanks the European H2020 for funding through grant LIMQUET. EDR and LR thank Labex EMC3 AQURATE (French ANR). SMS acknowledges funding from "Programa Internacional de Becas 'la Caixa'-Severo Ochoa." JA and SMS acknowledge funding from Generalitat de Catalunya 2017 SGR 327 and the Spanish MINECO project ENE2017-85087-C3. ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, Grant No. SEV-2013-0295) and is funded by the CERCA Programme / Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autònoma de Barcelona Materials Science PhD program. This work has received funding from the European Union's Horizon 2020 Research and Innovation Programme under grant agreement No. 654360 NFFA-Europe. ; Peer reviewed