Research and application of GaAs/AlxGa1-xAs heterostructures for microwave detection ; Įvairiatarpių GaAs/AlxGa1-xAs darinių tyrimai ir taikymai mikrobangų detekcijai

Abstract

Spectrum region of millimeter wave is extensively used in various areas: from consumer devices in telecommunication networks, to specific applications in military and diagnostic medicine. Schottky diode is the most commonly used two terminal device in microwave receivers. Although the operational frequency of Schottky diode is reaching the terahertz frequency range it has several drawbacks such as sensitivity dependence on temperature, long-term instability and sensitivity to overloads. These drawbacks impelled one to search new type of devices. Two types of microwave diodes fabricated using GaAs/AlGaAs heterostructures are presented in the thesis. The quality of semiconductor epitaxial layers was experimentally estimated using photoluminescence and time correlated single photon counting techniques. The process of microwave diode fabrication is described. Electrical properties of microwave diodes were estimated from current-voltage characteristics and properties of microwaves detection were investigated in wide frequency range.