Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

Abstract

By means of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations, the electronic band structure of the topological insulator PbBi4Te4Se3 for both five-layer and seven-layer surface terminations is investigated. The measured and calculated band structure features are in good agreement and indicate two well-resolved topological surface states with distinct spatial localizations within bulk band gap of about 0.3 eV. ; This work is supported by the Russian Science Foundation (Grants No. 18-12-00169 in part of the density functional calculations and No. 18-12-00062 in part of the photoemission measurements) and Saint Petersburg State University (Grant ID 40990069). The support from the Academic D.I. Mendeleev Fund Program of Tomsk State University (Project No. 8.1.01.2018), the Russian Foundation for Basic Researches (Grant No. 18-52-06009), the Science Development Foundation under the President of the Republic of Azerbaijan (Grant No. EIF/MQM/Elm-Tehsil-1-2016-1(26)-71/01/4-M33), the Basque Country Government, Departamento de Educación, Universidades e Investigación (Grants No. IT-756-13 and No. IT1301-19) and the Spanish Ministerio de Ciencia e Innovación (Grant No. FIS2016-75862-P) are acknowledged. J.S.-B. gratefully acknowledges financial support from the Impuls-und Vernetzungsfonds der Helmholtz-Gemeinschaft under Grant No. HRSF-0067 (Helmholtz-Russia Joint Research Group). Calculations were partly performed using computational resources provided by Resource Center "Computer Center of SPbU" (http://cc.spbu.ru) and the SKIFCyberia sup